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| FFB5551 FFB5551 Dual-Chip NPN General Purpose Amplifier * This device is deisgned for general purpose high voltage amplifiers. * E1 is Pin 1. C1 E2 B2 C2 B1 E1 SC70-6 Mark: .P1 Absolute Maximum Ratings* TC=25C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 160 180 6.0 200 - 55 ~ 150 Units V V V mA C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TC=25C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Condition IC = 1.0mA, IB = 0 IC = 100A, IE = 0 IE = 10A, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100C VEB = 4.0V, IC = 0 VCE = 5.0V, IC = 1.0mA VCE = 5.0V, IC = 10mA VCE = 5.0V, IC = 50mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCE = 10V, IC = 10mA f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz 100 80 80 30 Min. 160 180 6.0 50 50 50 Max. Units V V V nA A nA Collector-Emitter Breakdown Voltage * Collector-Base BreakdownVoltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain On Characteristics * 250 0.15 0.20 1.0 1.0 300 6.0 V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Small Signal Characteristics fT Cobo Current gain Bandwidth Product Output Capacitance MHz pF * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c)2003 Fairchild Semiconductor Corporation Rev. A, June 2003 FFB5551 Thermal Characteristics TA=25C unless otherwise noted Symbol PD RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max. 200 1.6 625 Units mW mW/C C/W (c)2003 Fairchild Semiconductor Corporation Rev. A, June 2003 FFB5551 Typical Characteristics Ta=125 C 0 VCE(SAT)[V], SATURATION VOLTAGE IC=10IB 10 100 Ta=25 C 0 hFE, DC CURRENT GAIN Ta=-40 C 0 Ta=25 C 0 10 1 Ta=125 C Ta=-40 C 0.1 0 0 1 Ta=25 C 0 0.1 1E-4 1E-3 0.01 0.1 1 1E-3 0.01 0.1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage 10 0.50 VBE(SAT)[V], SATURATION VOLTAGE IC=10IB 0.45 VCE=5V Ta=25 C 0 IC[A], COLLECTOR CURRENT Ta=25 C 0 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 1 Ta=-40 C 0 Ta=25 C 0 Ta=25 C Ta=125 C Ta=-40 C 0 0 0 Ta=125 C 0 0.1 1E-3 0.01 0.1 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage (c)2003 Fairchild Semiconductor Corporation Rev. A, June 2003 FFB5551 Package Dimensions SC70-6 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation Rev. A, June 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2003 Fairchild Semiconductor Corporation Rev. I2 |
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